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RHRG30120
Data Sheet January 2002
30A, 1200V Hyperfast Diode
The RHRG30120 is a hyperfast diode with soft recovery characteristics (trr < 65ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of high frequency switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Formerly developmental type TA49041.
Features
* Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <65ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V * Avalanche Energy Rated * Planar Construction
Applications
* Switching Power Supplies * Power Switching Circuits * General Purpose
Ordering Information
PART NUMBER RHRG30120 PACKAGE TO-247 BRAND RHRG30120
Packaging
JEDEC STYLE TO-247
ANODE CATHODE
NOTE: When ordering, use the entire part number.
Symbol
K
CATHODE (BOTTOM SIDE METAL)
A
Absolute Maximum Ratings TC = 25oC
RHRG30120 Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 78oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 125 30 -65 to 175 W mJ
oC
UNITS V V V A
1200 1200 1200 30
60
A
300
A
(c)2002 Fairchild Semiconductor Corporation
RHRG30120 Rev. C
RHRG30120
Electrical Specifications
SYMBOL VF TC = 25oC, Unless Otherwise Specified MIN = 150oC TYP 48 22 MAX 3.2 2.6 250 1 65 85 1.2 UNITS V V A mA ns ns ns ns
oC/W
TEST CONDITION IF = 30A IF = 30A, TC
IR
VR = 1200V VR = 1200V, TC = 150oC
trr
IF = 1A, dIF/dt = 100A/s IF = 30A, dIF/dt = 100A/s
ta tb RJC DEFINITIONS
IF = 30A, dIF/dt = 100A/s IF = 30A, dIF/dt = 100A/s
VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 6), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). R JC = Thermal resistance junction to case. pw = pulse width. D = duty cycle.
Typical Performance Curves
200 IR, REVERSE CURRENT (A) 100 I F, FORWARD CURRENT (A) 500 100 175oC
10 100oC
175 oC 10 25oC
100oC
1.0
0.1 25oC
0.01
1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VF, FORWARD VOLTAGE (V)
0.001 0 200 400 600 800 1000 1200 VR, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
(c)2002 Fairchild Semiconductor Corporation
RHRG30120 Rev. C
RHRG30120 Typical Performance Curves
100
(Continued)
40
IF(AV), AVERAGE FORWARD CURRENT (A)
75 t, TIME (ns) trr 50 ta
30 DC
20 SQ. WAVE
25
tb
10
0
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC)
1
10 IF, FORWARD CURRENT (A)
30
FIGURE 3. trr , ta AND t b CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L
DUT RG VGE t1 t2
CURRENT SENSE + VDD 0
IF
dIF dt ta
trr tb
IGBT
-
0.25 IRM IRM
FIGURE 5. trr TEST CIRCUIT
I MAX = 1.225A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV
FIGURE 6. trr WAVEFORMS AND DEFINITIONS
VAVL
IL
IL
t0 t1 t2 t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
(c)2002 Fairchild Semiconductor Corporation
RHRG30120 Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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